(China (Mainland))
Product Summary
The AOP608 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP608 is Pb-free (meets ROHS & Sony 259 specifications). AOP608L is a Green Product ordering option. AOP608 and AOP608L are electrically identical.
Parametrics
AOP608 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 40 to -40V; (2)Gate-Source Voltage: ±20V; (3)Continuous Drain Current: 6.3 to -5.5A; (4)Pulsed Drain Current: 20 to -20A; (5)Power Dissipation: 2.5W; (6)Junction and Storage Temperature Range: -55 to 150℃.
Features
AOP608 features: (1)n-channel: p-channel; (2)VDS (V) = 40V: -40V; (3)ID = 6.3A (VGS=10V): -5.5A (VGS = -10V); (4)RDS(ON): RDS(ON): < 33mΩ (VGS=10V): < 45mΩ (VGS = -10V); < 46mΩ (VGS=4.5V): < 63mΩ (VGS = -4.5V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 AOP608 |
Other |
|
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
AOP605L |
Other |
|
Data Sheet |
Negotiable |
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|
AOP608 |
Other |
|
Data Sheet |
Negotiable |
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AOP610 |
|
MOSFET N/P-CH COMPL 30V 8-PDIP |
Data Sheet |
Negotiable |
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|
AOP611 |
Other |
|
Data Sheet |
Negotiable |
|
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AOP609 |
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MOSFET N/P-CH COMPL 60V 8-PDIP |
Data Sheet |
Negotiable |
|
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|
AOP607 |
|
MOSFET N/P-CH COMPL 60V 8-PDIP |
Data Sheet |
Negotiable |
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