Product Summary

The BSP125 is a SIPMOS Power-Transistor.

Parametrics

BSP125 absolute maximum ratings: (1)Continuous drain current, ID: 0.12A; (2)Pulsed drain current, ID: 0.48; (3)Reverse diode dv/dt: 6 kV/μs; (4)Gate source voltage VGS: ±20 V; (5)ESD Class: 1A (>250V, <500V); (6)Power dissipation, Ptot: 1.8 W; (7)Operating and storage temperature Tj , Tstg: -55 to +150 ℃.

Features

BSP125 features: (1)N-Channel; (2)Enhancement mode; (3)Logic Level; (4)dv/dt rated; (5)Pb-free lead plating; RoHS compliant; (6)Qualified according to AEC Q101.

Diagrams

BSP125 view

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSP125 E6327
BSP125 E6327

MOSFET N-CH 600V 120MA SOT-223
Data Sheet
Negotiable 
BSP125 E6433
BSP125 E6433

MOSFET N-CH 600V 120MA SOT-223
Data Sheet
Negotiable 
BSP125 L6327
BSP125 L6327
Infineon Technologies
MOSFET SIPMOS PWR-TRNSTR
Data Sheet
0-1: $0.60
1-10: $0.53
10-100: $0.47
100-250: $0.37
BSP125 L6433
BSP125 L6433
Infineon Technologies
MOSFET SIPMOS PWR-TRNSTR
Data Sheet
0-1: $0.60
1-10: $0.50
10-100: $0.41
100-500: $0.37
BSP125
BSP125
Other

Data Sheet
Negotiable